DNX–SENS–NV01
CHF 2’900 per unit
• Room-temperature quantum sensing
• NV-diamond sensor
• 150 MHz optical readout bandwidth
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Precision sensing at atomic scale
The DNX–SENS–NV01 Single Zone NV-Diamond Quantum Sensor is designed for laboratory and industrial teams requiring stable magnetic-field, temperature and materials measurements without cryogenic infrastructure. Its solid-state NV-diamond sensing element combines room-temperature quantum sensing with an integration-ready hardware package, helping teams progress from experimental characterization to repeatable measurement workflows.
The sensor incorporates a microwave resonator tuned for NV-center excitation in the 2.8 GHz frequency range and an integrated high-speed silicon fluorescence detector. A dedicated SMA RF input provides microwave excitation, while a second SMA connector delivers the amplified analogue photoluminescence signal directly to an oscilloscope, data-acquisition system, lock-in amplifier or RFSoC processing platform.
The system is suited to research instrumentation, advanced materials analysis, device diagnostics and field-deployable sensing programs. Enterprise integration support covers installation planning, interface alignment and workflow configuration so the sensor can be introduced alongside existing acquisition and analysis systems with minimal disruption.
Parameters
Parameter | Specification |
|---|---|
Product model | DNX–SENS–NV01 |
Sensor type | Single-zone NV-diamond quantum sensor |
Sensing platform | Solid-state nitrogen-vacancy diamond |
Operating temperature | Room-temperature operation |
Measurement capabilities | Magnetic field, temperature and materials characterization |
Measurement principle | Optically detected magnetic resonance |
Sensing zones | 1 |
Microwave excitation | Integrated resonator |
Resonator frequency | Tuned for approximately 2.8 GHz NV-center excitation |
RF input | 1 × SMA |
Optical readout | Integrated fixed-gain silicon photodetector |
Signal output | 1 × SMA analogue output |
Output compatibility | Oscilloscope, DAQ, lock-in amplifier or external signal-processing system |
Intended operation | Continuous-wave and pulsed measurement workflows |
Integrated Optical Detection
Parameter | Specification |
|---|---|
Detector material | Silicon |
Detector architecture | Reverse-biased PIN photodiode with fixed-gain transimpedance amplifier |
Active area | Ø 1.0 mm / 0.8 mm² |
Wavelength range | 200–1100 nm |
Peak response wavelength | 730 nm, typical |
Peak responsivity | 0.44 A/W, typical |
Small-signal bandwidth | 150 MHz |
Rise time | 2.3 ns |
Noise-equivalent power | 2.92 × 10⁻¹¹ W/√Hz |
Output noise | 1.5 mV RMS |
Maximum dark offset | ±10 mV |
Maximum output current | 100 mA |
Supported load impedance | 50 Ω to high impedance |
Transimpedance gain at 50 Ω | 5 × 10³ V/A, ±2% |
Transimpedance gain at high impedance | 1 × 10⁴ V/A, ±2% |
Output voltage at 50 Ω | 0–5 V |
Output voltage at high impedance | 0–10 V |
Detector-stage supply | +12 VDC / ground / −12 VDC |
Detector operating temperature | 10–40 °C |
Detector storage temperature | −20–70 °C |
The integrated optical detector supports visible and near-infrared fluorescence monitoring over a 200–1100 nm wavelength range. Its buffered output can drive either 50 Ω or high-impedance acquisition inputs, with output ranges of 0–5 V and 0–10 V respectively.
Hardware Interfaces
Interface | Function |
|---|---|
SMA RF input | Microwave excitation of the integrated 2.8 GHz resonator |
SMA signal output | Amplified NV-diamond photoluminescence signal |
RF architecture | Single-zone resonator configuration |
Optical architecture | Integrated illumination and fluorescence collection path |
Detector output mode | Analogue voltage |
Recommended termination | 50 Ω for high-speed acquisition or high impedance for maximum voltage gain |
Detector power | Bipolar ±12 VDC detector-stage supply |
External processing | Compatible with oscilloscopes, lock-in amplifiers, DAQ systems and RFSoC platforms |
The detector output incorporates a 50 Ω series termination. When connected to a 50 Ω input, the specified transimpedance gain and voltage range already account for the resulting voltage-divider effect. High-impedance acquisition provides twice the nominal transimpedance gain and output-voltage range.
Key Features
Room-temperature quantum sensing
The NV-diamond platform enables quantum-enhanced sensing without cryogenic cooling, supporting laboratory, industrial and deployable measurement environments.
Single-zone measurement architecture
A dedicated sensing region provides a straightforward signal path for localized magnetic-field, temperature and materials measurements.
Integrated 2.8 GHz microwave resonator
The internal resonator is tuned for NV-center spin excitation and accessed through a dedicated SMA RF input.
150 MHz optical readout bandwidth
The high-speed silicon detector provides a 150 MHz small-signal bandwidth and a 2.3 ns rise time, supporting continuous-wave ODMR, modulated measurements and time-resolved pulse experiments.
Amplified analogue SMA output
The fluorescence signal is converted directly into an amplified voltage output, reducing the amount of external optical detection hardware required.
Broad fluorescence detection range
The integrated detector covers wavelengths from 200 to 1100 nm and reaches its typical peak responsivity at 730 nm, aligning well with the red and near-infrared fluorescence emitted by NV-diamond sensing systems.
Flexible acquisition compatibility
The output can be connected to 50 Ω high-speed instrumentation or high-impedance measurement inputs, providing either higher bandwidth compatibility or increased voltage gain.
Continuous-wave and pulsed operation
The reverse-biased PIN photodiode and fixed-gain transimpedance architecture are suitable for measuring both continuous and pulsed optical signals.
Applications
Magnetic-field detection and mapping
Temperature sensing and thermal monitoring
Advanced materials characterization
Current and electromagnetic-field measurements
Electronic-device diagnostics
Resonance and spin-dynamics experiments
Laboratory ODMR instrumentation
Industrial process monitoring
Quantum-sensing research and development